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HERAF1601G - HERAF1608G
Isolated 16.0 AMPS. Glass Passivated High Efficient Rectifiers
.185(4.7) .173(4.4) .124(3.16) .118(3.00)
ITO-220AC
.406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA
.272(6.9) .248(6.3)
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
.112(2.85) .100(2.55)
.606(15.5) .583(14.8)
.063(1.6) MAX
.161(4.1) .146(3.7)
.110(2.8) .098(2.5)
.030(0.76) .020(0.50)
Mechanical Data
Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/10 seconds 0.25",(6.35mm) from case. Mounting torque : 5 in - 1bs. max. Weight: 2.24 grams
.055(1.4) .043(1.1) .035(0.9) .020(0.5)
.071(1.8) MAX
.543(13.8) .512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1 PIN 2 CASE
Case Positive
Dimensions in inches and (millimeters)
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol HERAF HERAF HERAF Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC =100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @16.0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range
Maximum Ratings and Electrical Characteristics
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
HERAF HERAF HERAF HERAF HERAF
Units
V V V A A
VRRM VRMS VDC I(AV) IFSM VF IR Trr
50 35 50
100 70 100
200 140 200
300 210 300
400 280 400 16
600 420 600
800 1000 560 700 800 1000
250 1.0 1.3 10 400 50 150 2.0 80 110 1.7
V uA uA nS pF o C/W o C o C
Cj
RJC
Notes:
TJ -65 to +150 TSTG -65 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HERAF1601G THRU HERAF1608G)
AVERAGE FORWARD CURRENT. (A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
20 16 12 8 4 0 0 50 CASE TEMPERATURE. ( C)
o
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
Tj=125 0C
100
10
100
150
Tj=25 0C
PEAK FORWARD SURGE CURRENT. (A)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
250
Tj=25 0C 8.3ms Single Half Sine Wave JEDEC Method
1
200 150 100
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
50 0 NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD CURRENT. (A)
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
JUNCTION CAPACITANCE.(pF)
250 200 150 100 50 0 1 2 5 10 20 50 100 200 500 1000 REVERSE VOLTAGE. (V)
HE RA F1 60 1G ~H HE ER RA AF F1 16 60 05 6G G ~H ER AF 16 08 G
Tj=25 0C
1.0
0.3 0.1
0.03 0.01 0.4
HE
0.6
RA
F1
3.0
60 1G ~H ER AF HE 16 04 RA G F1 HE 60 RA 6G F1 ~H ER 60 5G AF 16 08 G
1
2
5
10
20
50
100
30
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A
(+) 50Vdc (approx) (-)
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: A06

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